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STD6528S Datasheet, PDF (2/4 Pages) AUK corp – NPN Silicon Transistor
STD6528S
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
VCBO
VCEO
VEBO
IC
PC
TJ
Tstg
Rating
25
20
5
150
200
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
BVCEO
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Cob
Test Condition
IC=1mA, IB=0
VCB=25V, IE=0
VEB=5V, IC=0
VCE=2V, IC=4mA
IC=100 ㎂, IB=10 ㎂
IC=50mA, IB=5mA
VCE=2V, IC=4mA
VCE=10V, IC=1mA
VCB=10V, IE=0, f=1MHz
Ta=25°C
Min. Typ. Max. Unit
20
-
-
V
-
-
0.1
µA
-
-
0.1
µA
1000 -
2500
-
-
0.03
-
V
-
-
0.2
-
0.6
-
V
-
150
-
MHz
-
1.5
-
pF
※ Recommend PCB solder land [Unit: mm]
KSD-T5C038-000
2