STD1664 Datasheet, PDF (2/5 Pages) AUK corp – NPN Silicon Transistor

STD1664
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CBO
BV_CEO
BV_EBO
I_C=50 ㎂, I_E=0
I_C=1 ㎃, I_B=0
I_E=50 ㎂, I_C=0
Collector cut-off current
I_CBO
V_CB=20V, I_E=0
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE^*
V_CE=3V, I_C=0.1A
Collector-Emitter saturation voltage
V_CE(sat) I_C=500 ㎃, I_B=50 ㎃
Transition frequency
f_T
V_CE=5V, I_C=50 ㎃
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1 ㎒
* : h_FE rank / O : 100 ~ 200, Y : 160 ~ 320
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
32
-
-
V
5
-
-
V
-
-
0.5
㎂
-
-
0.5
㎂
100
-
320
-
- 0.15 0.4
V
-
150
-
㎒
-
15
-
㎊
KSD-T5B009-001
2