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| STD1408PI Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor | |||
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Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector cut-off current
ICBO
VCB=80V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
Collector-Emitter breakdown voltage V(BR)CEO IC=50mA, IB=0
DC current gain
VCE=5V, IC=0.5A
hFE
VCE=5V, IC=3A
Collector-Emitter saturation voltage VCE(sat) IC=3A, IB=0.3A
Base-Emitter saturation voltage
VBE(on) VCE=5V, IB=3A
Transition frequency
fT
VCB=5V, IC=0.5A
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
* hFE rank : 120~240 Only
STD1408PI
Min. Typ. Max. Unit
-
-
10
μA
-
-
10
μA
80
-
-
V
120
-
240
-
40
-
-
-
- 0.45 1.5
V
-
1.0 1.5
V
-
8
-
MHz
-
40
-
pF
KSD-T0O111-000
2
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