STD13005I Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Power Transistor

STD13005I
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter sustaining voltage
Collector cut-off current
Emitter cut-off current
DC Current gain
V_CE(sus)
I_CEV
I_EBO
h_FE*
I_C=10mA, I_B=0
V_CEV=Rated Value
V_BE(off)=1.5V
V_EB=9V, I_C=0
I_C=1A, V_CE=5V^※
I_C=2A, V_CE=5V
Collector-Emitter saturation voltage
V_CE(sat)*
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
I_C=4A, I_B=1A
Base-Emitter saturation voltage
V_BE(sat)*
I_C=1A, I_B=0.2A
I_C=2A, I_B=0.5A
Transition frequency
f_T
V_CB=10V, I_C=0.5A, f=1MHz
Output capacitance
C_ob
V_CB=10V, I_E=0, f=0.1MHz
Turn on Time
t_ON
Storage Time
t_STG
Fall Time
t_F
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse
V_CC=125V,I_C=2A, R_L=62.5Ω
I_B1=-I_B2=0.4A
Min.
400
-
-
15
8
-
-
-
-
-
-
-
-
-
-
(Tc=25℃)
Typ. Max. Unit
-
-
V
-
1
mA
-
1
mA
-
30
-
30
-
0.5
-
0.6
V
-
1
-
1.2
V
-
1.6
4
-
MHz
35
-
pF
0.5
-
2.5
-
㎲
0.1
-
KSD-T6Q021-000
2