English
Language : 

STD13003D Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Power Transistor
◁
STC13003D
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter sustaining voltage
VCE(sus) IC=5mA, IB=0
Collector cut-off current
ICBO
VCB=700V, IE=0
Emitter cut-off current
IEBO
VEB=9V, IC=0
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
hFE*
IC=0.5A, VCE=2V
IC=1A, VCE=2V
VCE(sat)*
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
VBE(sat)*
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
Transition frequency
Output capacitance
fT
VCB=10V, IC=0.1A, f=1MHz
Cob
VCB=10V, IE=0, f=0.1MHz
Turn on Time
ton
Storage Time
Fall Time
tstg
<
tf
* Pulse test: PW≤300 ㎲, Duty cycle≤2% Pulse
(Ta=25℃)
Min. Typ. Max. Unit
400
-
-
V
-
-
10
uA
-
-
10
uA
15
-
35
5
-
-
-
-
0.5
-
-
1
V
-
-
3
-
-
1
V
-
-
1.2
-
4
-
MHz
-
13
-
pF
-
1.1
-
-
4
-
㎲
-
0.7
-
KSD-T6O006-002
2
 ▷