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| STC4350Q Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor | |||
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Absolute Maximum Ratings
Characteristic
Symbol
Collector-base voltage
VCBO
Collector-emitter voltage
VCEO
Emitter-base voltage
VEBO
Collector current
IC
Collector Power dissipation
PC
PCâ»
Junction temperature
TJ
Storage temperature range
Tstg
â» Device mounted on ceramic substrate (250mm2â
¹0.8t)
Rating
60
50
6
3
1.1
1.5
150
-55~150
STC4350Q
[Ta=25â]
Unit
V
V
V
A
W
W
ï°C
ï°C
Thermal Characteristics
Characteristic
Thermal
resistance
Junction-Ambient
Symbol
Rth(J-A)
Rating
113.6
83.3â»
[Ta=25â]
Unit
ï°C /W
Electrical Characteristics
Characteristic
Collector-emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BVCEO
ICBO
IEBO
hFE
hFE
VCE(sat)
VBE(sat)
fT
Cob
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
*: Pulse test : tPâ¤300µs, Duty cycleâ¤2%
Test Condition
IC=10mA, IB=0
VCB=60V, IE=0
VEB=6V, IC=0
VCE=2V, IC=0.1A*
VCE=2V, IC=2A*
IC=2A, IB=0.1A*
IC=2A, IB=0.1A*
VCE=10V, IC=0.05A
VCB=10V, IE=0, f=1MHz
<
Min.
50
Typ.
-
[Ta=25â]
Max. Unit
-
V
-
-
0.1
ïA
-
-
0.1
ïA
120
-
240
-
40
-
-
-
-
0.35
V
-
-
1.2
V
-
210
-
MHz
-
18
-
pF
-
100
-
-
300
-
nS
-
50
-
KSD-T5A016-000
2
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