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STC4350F Datasheet, PDF (2/6 Pages) AUK corp – NPN Silicon Transistor
STC4350F
Electrical Characteristics
Characteristic
Symbol
Collector-emitter breakdown voltage
BVCEO
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
ICBO
IEBO
hFE
hFE
VCE(sat)
VBE(sat)
Transition frequency
fT
Collector output capacitance
Cob
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
*: Pulse test : tP≤300µs, Duty cycle≤2%
Test Condition
IC=10mA, IB=0
VCB=60V, IE=0
VEB=6V, IC=0
VCE=2V, IC=0.1A*
VCE=2V, IC=2A*
IC=2A, IB=0.1A*
IC=2A, IB=0.1A*
VCE=10V, IC=0.05A
VCB=10V, IE=0, f=1MHz
<
[Ta=25℃]
Min. Typ. Max. Unit
50
-
-
V
-
-
0.1
μA
-
-
0.1
μA
120
-
240
-
40
-
-
-
-
0.35
V
-
-
1.2
V
-
210
-
MHz
-
18
-
pF
-
100
-
-
300
-
nS
-
50
-
KSD-T5B008-005
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