STC4073D Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

STC4073D
Electrical Characteristics
Characteristic
Symbol
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV_CBO
I_C=100μA, I_E=0
120
-
-
V
Collector-Emitter breakdown voltage
BV_CEO
I_C=1mA, I_B=0
120
-
-
V
Emitter-Base breakdown voltage
BV_EBO
I_E=100μA, I_C=0
6
-
-
V
Collector cut-off current
I_CBO
V_CB=120V, I_E=0
-
-
0.1
㎂
Emitter cut-off current
I_EBO
V_EB=4V, I_C=0
-
-
0.1
㎂
DC current gain
h_FE ¹⁾
Collector-Emitter saturation voltage
V_CE(sat)²⁾
Base-Emitter saturation voltage
V_BE(sat) ²⁾
V_CE=5V, I_C= 30 ㎃
200
-
400
-
I_C=500 ㎃, I_B=50 ㎃
-
-
0.5
V
I_C=100 ㎃, I_B=10 ㎃
-
0.1
V
I_C=500 ㎃, I_B=50 ㎃
-
-
1.2
V
Transition frequency
f_T
V_CE=5V, I_C= 50 ㎃
-
170
-
㎒
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1 ㎒
-
10
-
㎊
* Note 1) hFE Rank : 200~400 only
* Note 2) Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%
KSD-T6O027-000
2