STC403Q Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Switching
Time
Turn-on Time
Storage Time
BV_CEO
I_CBO
I_EBO
h_FE *
V_BE(ON)
V_CE(sat)
f_T
C_ob
t_on
I_C=50mA, I_B=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=0.5A
I_C=2A, I_B=0.2A
V_CB=5V, I_C=0.5A
V_CB=10V, I_E=0, f=1MHz
t_stg
Fall Time
t_f
* hFE rank : 200~400 Only
STC403Q
(Ta=25°C)
Min. Typ. Max. Unit
60
-
-
-
-
-
200
-
-
0.7
-
0.4
-
30
-
35
-
V
50
μA
50
μA
400
-
1
V
1
V
-
MHz
-
pF
-
0.65
-
-
1.3
-
㎲
-
0.65
-
KSD-T5A002-002
2