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STC403D Datasheet, PDF (2/6 Pages) AUK corp – NPN Silicon Transistor
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Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage BVCEO IC=50mA, IB=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE * VCE=5V, IC=0.5A
Base-Emitter on voltage
VBE(ON) VCE=5V, IC=0.5A
Collector-Emitter saturation voltage VCE(sat) IC=2A, IB=0.2A
Transition frequency
fT
VCB=5V, IC=0.5A
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Turn-on Time
ton
Switching
Time
Storage Time
tstg
Fall Time
tf
* hFE rank : 200~400 Only
STC403D
(Ta=25°C)
Min. Typ. Max. Unit
60
-
-
V
-
-
50
μA
-
-
50
μA
200
-
400
-
-
0.7
1
V
-
0.4
1
V
-
30
-
MHz
-
35
-
pF
-
0.65
-
-
1.3
-
㎲
-
0.65
-
KSD-T6O012-001
2
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