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STC401Q Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor
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STC401Q
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BVCBO IC=100 ㎂, IE=0
Collector-Emitter breakdown voltage BVCEO IC=1mA, IB=0
Emitter-Base breakdown voltage
BVEBO IE=10mA, IC=0
Collector cut-off current
ICBO
VCB=60V, IE=0
Emitter cut-off current
IEBO
VEB=5V, IC=0
DC current gain
hFE *
VCE=2V, IC=100mA
VCE=2V, IC=1A
Base-Emitter on voltage
VBE(ON) VCE=2V, IC=500mA
Collector-Emitter saturation voltage
VCE(sat) IC=500mA, IB=50mA
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
Transition frequency
* hFE rank : 200~400 Only
fT
VCB=10V, IC=50mA
Min. Typ. Max. Unit
80
-
-
V
60
-
-
V
5
-
-
V
-
-
0.1
A
-
-
200
-
80
-
0.1
A
400
-
-
-
-
1.2
V
-
-
0.4
V
-
10
-
pF
-
160
-
MHz
KSD-T5A013-001
2
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