STC2073Q Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO
I_C=100A, I_E=0
Collector-Emitter breakdown voltage
BV_CEO
I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO
I_E=100A, I_C=0
Collector-base cut-off current
I_CBO
V_CB=160V, I_E=0
Collector-emitter cut-off current
I_CEO
V_CE=160V, I_B=0
Emitter-base cut-off current
I_EBO
V_EB=4V, I_C=0
DC current gain
h_FE ¹⁾
V_CE=5V, I_C= 30 ㎃
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
V_CE(sat)²⁾
V_BE(sat) ²⁾
I_C=500 ㎃, I_B=50 ㎃
I_C=500 ㎃, I_B=50 ㎃
Transition frequency
f_T
V_CE=5V, I_C= 50 ㎃
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1 ㎒
* Note 1) hFE Rank : 200~400 only
* Note 2) Pulse Tester : Pulse Width ≤300s, Duty Cycle ≤2.0%
STC2073Q
(Ta=25C)
Min. Typ. Max. Unit
160
-
-
V
160
-
-
V
6
-
-
V
-
-
0.1
㎂
-
-
1
㎂
-
-
0.1
㎂
200
-
400
-
-
-
0.5
V
-
-
1.2
V
-
150
-
㎒
-
10
-
㎊
KSD-T5A004-002
2