STC201F Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

STC201F
Electrical Characteristics
Characteristic
Symbol
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV_CBO
I_C=100μA, I_E=0
Collector-Emitter breakdown voltage
BV_CEO
I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO
I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=45V, I_E=0
Emitter cut-off current
DC current gain
I_EBO
h_FE^*
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
Collector-Emitter saturation voltage
V_CE(sat)
I_C=500mA, I_B=50mA
Transition frequency
f_T
V_CE=5V, I_C=10mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
* Note 1) hFE Rank : 160~320 only
* Note 2) Pulse Tester : Pulse Width ≤300μs, Duty Cycle ≤2.0%
45
-
-
V
40
-
-
V
5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
160
-
320
-
-
-
0.5
V
-
150
-
MHz
-
8
-
pF
KSD-T5B018-000
2