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SMK630D Datasheet, PDF (2/8 Pages) KODENSHI KOREA CORP. – HIGH VOLTAGE SWITCHING APPLICATIONS | |||
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SMK630D
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
BVDSS ID=250uA, VGS=0
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
â£
Forward transfer conductance â£
IDSS
IGSS
RDS(ON)
gfs
VDS=200V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=4.5A
VDS=10V, ID=4.5A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=100V, ID=9A
RG=25â¦
â¢â£
Fall time
tf
Total gate charge
Gate-source charge
Gate-drain charge
Qg
VDS=160V, VGS=10V
Qgs
ID=9A
Qgd
â¢â£
Min.
200
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
0.34
5.5
420
99
24
11
92
70
72
12
2.4
3.5
Max.
-
4.0
1
±100
0.40
-
525
128
28
-
-
-
-
17
-
-
Unit
V
V
uA
nA
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
IS
Integral reverse diode
â
ISM
in the MOSFET
â£
VSD
VGS=0V, IS=9A
-
-
9
-
-
36
-
-
1.4
Reverse recovery time
Reverse recovery charge
trr
IS=9A, VGS=0V
Qrr
dIF/dt=100A/us
-
158
-
-
0.97
-
Unit
A
V
ns
uC
Note ;
â Repetitive rating : Pulse width limited by maximum junction temperature
â¡ L=4.3mH, IAS=9A, VDD=50V, RG=25â¦, Starting TJ=25â
⢠Pulse Test : Pulse widthâ¤300us, Duty cycleâ¤2%
⣠Essentially independent of operating temperature
KSD-T6O014-001
2
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