SMK0170I-1 Datasheet, PDF (2/8 Pages) KODENSHI KOREA CORP. – SWITCHING REGULATOR APPLICATIONS

SMK0170I
Electrical Characteristics (T_C=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
Forward transfer conductance ④
Input capacitance
Output capacitance
Reverse transfer capacitance
BV_DSS
V_GS(th)
I_DSS
I_GSS
R_DS(ON)
g_fs
Ciss
Coss
Crss
I_D=250A, V_GS=0
I_D=250A, V_DS=V_GS
V_DS=700V, V_GS=0V
V_DS=0V, V_GS=30V
V_GS=10V, I_D=0.5A
V_DS=10V, I_D=0.5A
V_GS=0V, V_DS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
V_DD=300V, I_D=1.0A
R_G=25Ω
③④
V_DD=560V, V_GS=10V
I_D=1.0A
③④
Min.
700
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
12.5
0.5
124
17.7
2.6
7
21
13
27
4.1
1.8
0.9
Max.
-
4.0
1
100
15.0
-
155
22.1
3.3
-
-
-
-
5.1
-
-
Unit
V
V
A
nA

S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (T_C=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current
Source current (Pulsed)
I_S
Integral reverse diode
①
I_SM
in the MOSFET
-
-
1.0
-
-
4.0
Forward voltage
④
V_SD
V_GS=0V, I_S=1.0A
-
-
1.4
Reverse recovery time
Reverse recovery charge
t_rr
I_S=1.0A, V_GS=0V
Q_rr
dI_S/dt=100A/us
-
190
-
-
0.53
-
Unit
A
V
ns
uC
Note ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=50mH, I_AS=0.8A, V_DD=50V, R_G=25Ω
③ Pulse Test : Pulse Width＜300us, Duty cycle≤ 2%
④ Essentially independent of operating temperature
KSD-T6Q007-000
2