SMK0160I-1 Datasheet, PDF (2/8 Pages) KODENSHI KOREA CORP. – SWITCHING REGULATOR APPLICATIONS

SMK0160I
Electrical Characteristics (T_C=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
BV_DSS I_D=250uA, V_GS=0
Gate threshold voltage
V_GS(th)
I_D=250uA, V_DS=V_GS
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
④
Forward transfer conductance ④
I_DSS
I_GSS
R_DS(ON)
g_fs
V_DS=600V, V_GS=0V
V_DS=0V, V_GS=±30V
V_GS=10V, I_D=0.5A
V_DS=10V, I_D=0.5A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
V_GS=0V, V_DS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
t_d(on)
t_r
t_d(off)
V_DD=300V, I_D=1.0A
R_G=25Ω
③④
Fall time
t_f
Total gate charge
Gate-source charge
Gate-drain charge
Q_g
V_DS=480V, V_GS=10V
Q_gs
I_D=1.0A
Q_gd
③④
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
9.3
0.32
131
19.4
3.4
5.5
5
13
28
3.9
1.7
0.85
Max.
-
4.0
1
±100
11.5
-
164
24.3
4.3
-
-
-
-
4.9
-
-
Unit
V
V
uA
nA
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (T_C=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
I_S
Integral reverse diode
①
I_SM
in the MOSFET
④
V_SD
V_GS=0V, I_S=1.0A
-
-
1.0
-
-
4.0
-
-
1.4
Reverse recovery time
Reverse recovery charge
t_rr
I_S=1.0A, V_GS=0V
Q_rr
dI_F/dt=100A/us
-
190
-
-
0.53
-
Unit
A
V
ns
uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=1080mH, I_AS=0.3A, V_DD=50V, R_G=25Ω, Starting T_J=25℃
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T6Q005-002
2