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SDB20D80D2-1 Datasheet, PDF (2/5 Pages) KODENSHI KOREA CORP. – HIGH VOLTAGE SCHOTTKY RECTIFIER | |||
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Absolute Maximum Ratings (Limiting Values, Per diode)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
Tj
SDB20D80D2
Value
Unit
80
V
10
A
20
150
A
-45â to +150â â
150
â
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
3.0
2.8
Unit
â/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Peak forward voltage drop
Reverse leakage current
VFM (1)
IRM (1)
IFM = 10A
VR = VRRM
Tj=25â
Tj=125â
Tj=25â
Tj=125â
-
0.70 0.80
V
-
0.65 0.72
V
-
-
0.6 mA
-
-
100 mA
Junction capacitance
Cj
VR = 1VDC, f=1MHz
-
550
-
pF
Note : (1) Pulse test : tPâ¤380 ã², Duty cycleâ¤2%
To evaluate the conduction losses use the following equation: PF = 0.36 x IF(AV) + 0.0335 IF2(RMS)
IFM
2 IF(AV)
IF(AV)
Forward Voltage : VFM = Vto + rd IFM
rd
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
VFM
Vto
KSD-D6S007-001
2
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