SDB20200PI-1 Datasheet, PDF (2/5 Pages) KODENSHI KOREA CORP. – HIGH VOLTAGE SCHOTTKY RECTIFIER

Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB20200PI
Symbol
V_RRM
V_RWM
V_R
I_F(AV)
I_FSM
T_stg
T_j
Value
Unit
200
V
10
A
20
180
A
-55℃ to +150℃ ℃
150
℃
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
R_th(j-c)
Value
4.0
3.6
Unit
℃/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Test Condition
Peak forward voltage drop
Reverse leakage current
Junction capacitance
V_FM ⁽¹⁾
I_RM ⁽¹⁾
C_j
I_FM = 10A
V_R = V_RRM
T_j=25℃
T_j=125℃
T_j=25℃
T_j=125℃
V_R = 10V_DC, f=1MHz
Note : (1) Pulse test : t_P≤380 ㎲, Duty cycle≤2%
Min. Typ. Max. Unit
-
-
0.95
V
-
-
0.88
V
-
-
20
uA
-
-
10
mA
-
-
120
pF
KSD-D0O024-002
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