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| SDB120G Datasheet, PDF (2/5 Pages) KODENSHI KOREA CORP. – 20V, 1A SCHOTTKY BARRIER RECTIFIER | |||
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SDB120G
Absolute Maximum Ratings (Rating at 25â ambient temperature unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
VRRM
VRWM
VR
20
V
Maximum average forward rectified current
IF(AV)
1
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
IFSM
12
A
Storage temperature range
Tstg
-55â to +150â â
Maximum operating junction temperature
TJ
150
â
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to ambient
* 1) Device mounted on FR-4 board with recommended pad layout.
Symbol
Rth(j-a) 1)
Value
250
Unit
â/W
Electrical Characteristics (Rating at 25â ambient temperature unless otherwise specified.)
Characteristic
Symbol
Test Condition
Min. Typ.
Peak forward voltage drop
Reverse leakage current
VFM 2)
IFM = 1A
IRM 2)
VR = VRRM
TJ=25â
TJ=125â
TJ=25â
TJ=125â
-
0.45
-
0.35
-
-
-
-
Typical junction capacitance
CJ
* 2) Pulse test: tPâ¤380 ã², Duty cycleâ¤2%
VR=1V, f=1MHz
-
280
Max.
0.50
0.40
1
25
-
Unit
V
V
mA
mA
pF
To evaluate the conduction losses use the following equation : PF = 0.34 IF(AV) + 0.091 IF2(RMS)
IFM
2 IF(AV)
IF(AV)
Forward Voltage : VFM = Vto + rd IFM
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
VFM
KSD-D6B036-001
2
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