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| SDB10200PI-1 Datasheet, PDF (2/5 Pages) KODENSHI KOREA CORP. – DUAL COMMON CATHODE SCHOTTKY RECTIFIER | |||
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Absolute Maximum Ratings (Limiting Values)
Characteristic
Maximum repetitive reverse voltage
Maximum working peak reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current
per diode
total device
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load per diode
Storage temperature range
Maximum operating junction temperature
SDB10200PI
Symbol
VRRM
VRWM
VR
IF(AV)
IFSM
Tstg
Tj
Value
Unit
200
V
5
A
10
120
A
-45â to +150â â
150
â
Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case
per diode
total device
Symbol
Rth(j-c)
Value
4.0
3.6
Unit
â/W
Electrical Characteristics (Per Diode)
Characteristic
Symbol
Test Condition
Min. Typ.
Peak forward voltage drop
VFM (1)
IFM = 5A
Tj=25â
Tj=125â
-
0.85
-
0.72
Reverse leakage current
IRM (1)
VR = VRRM
Tj=25â
-
-
Tj=125â
-
-
Junction capacitance
Cj
VR = 1VDC, f=1MHz
-
150
Note : (1) Pulse test : tPâ¤380 ã², Duty cycleâ¤2%
To evaluate the conduction losses use the following equation: PF = 0.68 IF(AV) + 0.032 IF2(RMS)
IFM
Max.
0.95
0.76
10
10
-
Unit
V
V
uA
mA
pF
2 IF(AV)
IF(AV)
Forward Voltage : VFM = Vto + rd IFM
rd
Conduction Loss : PF = Vto IF(AV) + rd IF2(RMS)
VFM
Vto
KSD-D0O013-002
2
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