SCT16N60P Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – Triac

Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case (AC)
Maximum thermal resistance junction to ambient (AC)
SCT16N60P
Symbol
R_th(j-c)
R_th(j-a)
Value
2.0
60
Unit
℃/W
℃/W
Electrical Characteristics (TJ=25℃, unless otherwise specified)
Off Characteristics
Characteristic
Symbol
Test Condition
Repetitive peak Off-state current
Repetitive peak reverse current
On Characteristics
I_DRM
I_RRM
V_D = V_DRM
V_R = V_RRM
Characteristic
Symbol
Test Condition
Peak On-state voltage
V_TM
I_T = 10A
Holding current
I_H
V_D = 6V, I_T = 0.5A
Gate trigger current
I_GT (Ⅰ-Ⅱ-Ⅲ)
I_GT (Ⅳ)
V_D = 6V, R_L = 10Ω
-
Gate trigger voltage
Gate Non-trigger voltage
V_GT (Ⅰ-Ⅱ-Ⅲ)
V_GD
V_D = 6V, R_L = 10Ω
V_D = V_DRM, T_j=125℃
Dynamic Characteristics
Characteristic
Critical rate of rise
of Off-state Voltage
Rate of Change of Commutation
Current
Critical rate of rise of on-state
current
Symbol
(dV/dt)_S
(dI/dt)_C
dI/dt
Test Condition
V_D = 2/3 V_DRM, T_j=125℃
(dV/dt)_C=10V/㎲↓,
T_j=125℃
f=120hz, I_G = 2×I_GT
t_r≤100 ㎱, T_j=125℃
Min. Typ.
-
-
-
-
Min.
-
-
-
-
-
0.2
Typ.
-
-
-
-
-
-
Min. Typ.
2000 -
8.0
-
-
-
Max.
5
5
Max.
1.55
50
35
-
1.3
-
Max.
-
-
50
Unit
uA
μA
Unit
V
mA
mA
mA
V
V
Unit
V/ μS
A/㎳
A/ μS
Simple circuit for (dV/dt)_S
Simple circuit for (dI/dt)_C vs (dV/dt)_C
Simple circuit for dI/dt
KSD-S0P005-000
2