SCT08N60P Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – Triac

Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case (AC)
Maximum thermal resistance junction to ambient (AC)
SCT08N60P
Symbol
R_th(j-c)
R_th(j-a)
Value
2.0
60
Unit
℃/W
℃/W
Electrical Characteristics (TJ=25℃, unless otherwise specified)
Off Characteristics
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Repetitive peak Off-state current
I_DRM
V_D = V_DRM
-
Repetitive peak reverse current
I_RRM
V_R = V_RRM
-
On Characteristics
Characteristic
Symbol
Test Condition
Min.
Peak On-state voltage
V_TM
I_T = 11A
-
Holding current
I_H
V_D = 12V, I_T = 0.2A
-
Gate trigger current
I_GT (Ⅰ-Ⅱ-Ⅲ) V_D = 12V, R_L = 30Ω
-
I_GT (Ⅳ)
-
-
Gate trigger voltage
V_GT (Ⅰ-Ⅱ-Ⅲ) V_D = 12V, R_L = 30Ω
-
Gate Non-trigger voltage
V_GD
V_D = 2/3 V_DRM, T_j=125℃ 0.2
Dynamic Characteristics
Characteristic
Critical rate of rise
of Off-state Voltage
Rate of Change of Commutation
Current
Critical rate of rise of on-state
current
Symbol
(dV/dt)_S
(dI/dt)_C
dI/dt
Test Condition
Min.
V_D = 2/3 V_DRM, T_j=125℃
(dV/dt)_C=10V/㎲↓,
T_j=125℃
f=120hz, I_G = 2×I_GT
t_r≤100 ㎱, T_j=125℃
3500
11.1
-
-
-
Typ.
-
-
-
-
-
-
Typ.
-
-
-
5
uA
5
μA
Max. Unit
1.55 V
50
mA
40
mA
-
mA
1.3
V
-
V
Max. Unit
- V/ μS
-
A/㎳
50 A/ μS
Simple circuit for (dV/dt)_S
Simple circuit for (dI/dt)_C vs (dV/dt)_C
Simple circuit for dI/dt
KSD-S0P003-000
2