SCT04N60P Datasheet, PDF (2/6 Pages) KODENSHI KOREA CORP. – Triac

Thermal Characteristics
Characteristic
Maximum thermal resistance junction to case (AC)
Maximum thermal resistance junction to ambient (AC)
SCT04N60P
Symbol
R_th(j-c)
R_th(j-a)
Value
3.0
60
Unit
℃/W
℃/W
Electrical Characteristics (TJ=25℃, unless otherwise specified)
Off Characteristics
Characteristic
Symbol
Test Condition
Repetitive peak Off-state current
I_DRM
V_D = V_DRM
Repetitive peak reverse current
I_RRM
V_R = V_RRM
On Characteristics
Characteristic
Symbol
Test Condition
Peak On-state voltage
Holding current
Gate trigger current
Gate trigger voltage
Gate Non-trigger voltage
V_TM
I_H
I_GT (Ⅰ-Ⅱ-Ⅲ)
I_GT (Ⅳ)
V_GT (Ⅰ-Ⅱ-Ⅲ)
V_GD
I_T = 5.5A
V_D = 12V, I_T = 0.2A
V_D = 12V, R_L = 30Ω
-
V_D = 12V, R_L = 30Ω
V_D = 2/3 V_DRM, T_j=125℃
Dynamic Characteristics
Characteristic
Critical rate of rise
of Off-state Voltage
Rate of Change of Commutation
Current
Critical rate of rise of on-state
current
Symbol
(dV/dt)_S
(dI/dt)_C
dI/dt
Test Condition
V_D = 2/3 V_DRM, T_j=125℃
(dV/dt)_C=10V/㎲↓,
T_j=125℃
f=120hz, I_G = 2×I_GT
t_r≤100 ㎱, T_j=125℃
Min.
-
-
Min.
-
-
-
-
-
0.2
Min.
100
2.5
-
Typ.
-
-
Typ.
-
-
-
-
-
-
Typ.
-
-
-
Max. Unit
5
uA
5
μA
Max. Unit
1.55
V
40
mA
30
mA
-
mA
1.3
V
-
V
Max. Unit
-
V/ μS
-
A/㎳
50 A/ μS
Simple circuit for (dV/dt)_S
Simple circuit for (dI/dt)_C vs (dV/dt)_C
Simple circuit for dI/dt
KSD-S0P001-002
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