SBC327 Datasheet, PDF (2/3 Pages) AUK corp – PNP Silicon Transistor

SBC327
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
Ratings
-50
-35
-5
-800
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Emitter breakdown voltage
Base-Emitter turn on voltage
Collector-Emitter saturation voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
BV_CEO
V_BE(ON)
V_CE(sat)
I_CBO
h_FE^*
f_T
C_ob
I_C=-1mA, I_B=0
V_CE=-1V, I_C=-300mA
I_C=-500mA, I_B=-50mA
V_CB=-25V, I_E=0
V_CE=-1V, I_C=-100mA
V_CB=-5V, I_E=10mA
f=100MHz
V_CB=-10V, I_E=0, f=1MHz
* : h_FE rank / 16(A):100 ~ 250, 25(B):160 ~ 400, 40(C):250 ~ 630
Min.
-35
-
-
-
100
Typ.
-
-
-
-
-
(Ta=25°C)
Max. Unit
-
V
-1.2
V
-700 mV
-100 nA
630
-
-
100
-
MHz
-
16
-
pF
KST-9020-000
2