MMBT2222A Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor

MMBT2222A
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=10μA, I_E=0
Collector-Emitter breakdown voltage
BV_CEO I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=10μA, I_C=0
Collector cut-off current
I_CBO
V_CB=75V, I_E=0
DC current gain
h_FE
V_CE=10V, I_C=10mA
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
V_CE(sat)
f_T
C_ob
I_C=150mA, I_B=15mA
V_CE=20V, I_C=20mA,
f=100MHz
V_CB=10V, I_E=0, f=1MHz
Delay time
Rise time
t_d
V_CC=30V_dc, V_BE(off)=0.5V_dc,
t_r
I_C=150mA_dc, I_B1=15mA_dc
Storage time
Fall Time
t_s
V_CC=30V_dc,I_C=150mA_dc,
t_f
I_B1=I_B2=15mA_dc
Ta=25°C
Min. Typ. Max. Unit
75
-
-
V
40
-
-
V
5
-
-
V
-
-
20
nA
100
-
-
-
-
-
0.4
V
250
-
-
MHz
-
-
8
pF
-
-
10
ns
-
-
25
ns
-
-
225
ns
-
-
60
ns
KSD-T5C095-000
2