KLT-231444 Datasheet, PDF (2/2 Pages) KODENSHI KOREA CORP. – 1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN

1310nm InGaAsP strained MQW 1.25Gbps DFB LD TO CAN
Outline Drawing
KLT-231444x
Pin connections
Pin config.
pin no. 1
pin no. 2
pin no. 3
pin no. 4
4G
case ground/LD anode
LD cathode
Monitor PD cathode
Monitor PD anode
4S
Case ground
LD cathode
Monitor PD anode
LD anode/m-PD cathode
4R
case ground/LD anode
m-PD anode
m-PD cathode
LD cathode
Ordering information
KLT
Kodenshi
LD
TO
Device Type
Wavelength
1 : FP(BH) 31 : 1310 nm
2 : DFB
55 : 1550 nm
3 : CWDM-DFB 49 : 1490 nm
4 : AR LD
xx:1xx0nm ±3nm(CWDM)
yB(band):O,E,S,C,L,NI,NC
Data Rate
Operating
Temp.
Package type Pin Config.
4 : 1.25 Gbps 2 : -20~70 1 : 1.5 mm ball lens S : 4S type
5 : 2.5 Gbps 4 : -20~85 2 : 2.0mm ball lens G : 4G type
5 : -40~85 3 : flat window
R : 4R type
4 : aspheric lens 3: 3G
2/2
For more information on other parts available, please visit our website: www.kodenshi.co.kr
KODENSHI KOREA CORP. 513-5 Eoyang-Dong, Iksan, 570-210, Korea
Rev.002