2N4401 Datasheet, PDF (2/5 Pages) NXP Semiconductors – NPN switching transistor

2N4401
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector-Base capacitance
Emitter-Base capacitance
Delay time
Rise time
Storage time
Fall Time
Symbol
Test Condition
BV_CBO I_C=100μA, I_E=0
BV_CEO I_C=1mA, I_B=0
BV_EBO I_E=100μA, I_C=0
I_CBO
V_CB=60V, I_E=0
I_CEX
V_CB=35V, V_EB=0.4V
I_EBO
V_EB=-6V, I_E=0
V_CE=1V, I_C=0.1mA
V_CE=1V, I_C=1.0mA
h_FE
V_CE=1V, I_C=10mA
V_CE=1V, I_C=150mA
V_CE=2V, I_C=500mA
V_CE(sat)
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
V_BE(sat)
f_T
C_cb
I_C=150mA, I_B=15mA
I_C=500mA, I_B=50mA
V_CE=10V, I_C=20mA,
f=100MHz
V_CB=5V, I_E=0, f=1MHz
C_eb
V_EB=0.5V, I_C=0, f=1MHz
t_d
V_CC=30V_dc, V_EB=2V_dc,
t_r
I_C=150mA_dc, I_B1=15mA_dc
t_s
V_CC=30V_dc,I_C=150mA_dc,
t_f
I_B1=I_B2=15mA_dc
Ta=25°C
Min. Typ. Max. Unit
60
-
-
V
40
-
-
V
6
-
-
V
-
-
0.1
uA
-
-
0.1
uA
-
-
0.1
uA
20
-
-
-
40
-
-
-
80
-
-
-
100
-
300
-
40
-
-
-
-
-
0.4
V
-
-
0.75
V
-
0.75 0.95
V
-
-
1.2
V
250
-
-
MHz
-
-
6.5
pF
-
-
30
pF
-
-
20
ns
-
-
25
ns
-
-
160
ns
-
-
35
ns
KSD-T0A078-000
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