SUT161G Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – Dual NPN Bipolar transistor

Descriptions
• General purpose amplifier
• Recommended for LED Drive Application
SUT161G
Dual NPN Bipolar transistor
Features
• Thermally Enhanced Power PKG
• Low saturation: V_CE(sat)= 0.5V Max
• 2 NPN chips in TESOP-8 Package
Ordering Information
Type NO.
Marking
TESOP-8
Package Code
SUT161G
SUT161□
□ : Year & Week Code
Absolute maximum ratings(TR1, TR2)
Characteristic
Symbol
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
V_CBO
V_CEO
V_EBO
I_C
I_CP*
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
P_C(Ta=25°C) **
P_C(Tc=25°C)
T_J
T_stg
TESOP-8
Ratings
160
160
6
1
2
0.75
0.55
7.5
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W/TOTAL
W/ELEMENT
W/TOTAL
°C
°C
** : Each terminal mounted on a recommended solder land
Electrical Characteristics(TR1, TR2)
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
BV_CBO
BV_CEO
I_C=100μA, I_E=0
I_C=1mA, I_B=0
Emitter-Base breakdown voltage
BV_EBO I_E=100μA, I_C=0
Collector cut-off current
I_CBO
V_CB=160V, I_E=0
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
I_EBO
h_FE ¹⁾
V_CE(sat)
V_BE(sat)
f_T
C_ob
V_EB=4V, I_C=0
V_CE=5V, I_C= 30 ㎃
I_C=500mA, I_B=50mA
I_C=500 ㎃, I_B=50 ㎃
V_CE=5V, I_C= 50 ㎃
V_CB=10V, I_E=0, f=1 ㎒
Note 1) hFE Rank : 200~400 only
KSD-T7K004-000
Min.
160
160
6
-
-
200
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
150
10
Max.
-
-
-
0.1
0.1
400
0.5
1.2
-
-
Unit
V
V
V
㎂
㎂
-
V
V
㎒
㎊
1