SUT121G Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – Dual NPN Bipolar transistor

Descriptions
• General purpose amplifier
• Recommended for LED Drive Application
SUT121G
Dual NPN Bipolar transistor
Features
• Thermally Enhanced Power PKG
• Low saturation: V_CE(sat)= 0.5V Max
• 2 NPN chips in TESOP-8 Package
Ordering Information
Type NO.
Marking
TESOP-8
Package Code
SUT121G
SUT121□
TESOP-8
□ : Year & Week Code
Absolute maximum ratings(TR1, TR2)
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
I_CP*
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
P_C(Ta=25°C) **
P_C(Tc=25°C)
T_J
T_stg
Ratings
120
120
6
1
2
0.75
0.55
7.5
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W/TOTAL
W/ELEMENT
W/TOTAL
°C
°C
** : Each terminal mounted on a recommended solder land
Electrical Characteristics(TR1, TR2)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Transition frequency
Collector output capacitance
Note 1) hFE Rank : 200~400 only
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE ¹⁾
V_CE(sat)
V_BE(sat)
f_T
C_ob
I_C=100μA, I_E=0
I_C=1mA, I_B=0
I_E=100μA, I_C=0
V_CB=120V, I_E=0
V_EB=4V, I_C=0
V_CE=5V, I_C= 30 ㎃
I_C=500mA, I_B=50mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C= 50 ㎃
V_CB=10V, I_E=0, f=1 ㎒
KSD-T7K003-000
120
-
-
V
120
-
-
V
6
-
-
V
-
-
0.1
㎂
-
-
0.1
㎂
200
-
400
-
-
-
0.5
V
-
-
1.2
V
-
170
-
㎒
-
10
-
㎊
1