SUT061G Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – Dual NPN Bipolar transistor

Descriptions
• General purpose amplifier
• Recommended for LED Drive Application
SUT061G
Dual NPN Bipolar transistor
Features
• Thermally Enhanced Power PKG
• Low saturation: V_CE(sat)= 0.4V Max
• 2 NPN chips in TESOP-8 Package
TESOP-8
Ordering Information
Type NO.
Marking
Package Code
SUT061
SUT061□
□ : Year & Week Code
Absolute maximum ratings(TR1, TR2)
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-Base voltage
V_EBO
Collector current
I_C
I_CP*
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
P_C(Ta=25°C) **
P_C(Tc=25°C)
T_J
T_stg
TESOP-8
Ratings
80
60
5
1
2
0.75
0.55
7.5
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W/TOTAL
W/ELEMENT
W/TOTAL
°C
°C
** : Each terminal mounted on a recommended solder land
Electrical Characteristics(TR1, TR2)
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Collector output capacitance
Transition frequency
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE ¹⁾
V_BE(ON)
V_CE(sat)
C_ob
f_T
Test Condition
I_C=100 ㎂, I_E=0
I_C=1mA, I_B=0
I_E=10mA, I_C=0
V_CB=60V, I_E=0
V_EB=5V, I_C=0
V_CE=2V, I_C=100mA
V_CE=2V, I_C=1A
V_CE=2V, I_C=500mA
I_C=500mA, I_B=50mA
V_CB=10V, I_E=0, f=1MHz
V_CB=10V, I_C=50mA
Note 1) hFE Rank : 200~400 only
Min.
80
60
5
-
-
200
80
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
10
160
Max.
-
-
-
0.1
0.1
400
-
1.2
0.4
-
-
Unit
V
V
V
μA
μA
-
V
V
pF
MHz
KSD-T7K002-000
1