SUT041 Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – Dual NPN Bipolar transistor

Descriptions
• General purpose amplifier
• Recommended for LED Drive Application
SUT041
Dual NPN Bipolar transistor
Features
• General Purpose application
• Low saturation: V_CE(sat)= 0.5V Max
• 2 NPN chips in SOP-8 Package
Ordering Information
Type NO.
Marking
SOP-8
Package Code
SUT041
SUT041□
SOP-8
□ : Year & Week Code
Absolute maximum ratings(TR1, TR2)
Characteristic
Symbol
Ratings
(Ta=25°C)
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C**
45
V
40
V
5
V
1
A(DC)
2
A(Pulse)
2
W/TOTAL
1.4
W/ELEMENT
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
T_J
150
°C
T_stg
-55~150
°C
**: When mounted on 40x40x0.8 ㎜ copper substrate
Electrical Characteristics(TR1, TR2)
Characteristic
Symbol
Test Condition
Min. Typ. Max. Unit
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
BV_CBO
BV_CEO
I_C=100μA, I_E=0
I_C=1mA, I_B=0
45
-
40
-
-
V
-
V
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
BV_EBO
I_CBO
I_EBO
h_FE ¹⁾
V_CE(sat)
I_E=10μA, I_C=0
V_CB=45V, I_E=0
V_EB=5V, I_C=0
V_CE=1V, I_C=100mA
I_C=500mA, I_B=50mA
5
-
-
V
-
-
0.1 μA
-
-
0.1 μA
160
-
320
-
-
-
0.5
V
Transition frequency
f_T
V_CE=5V, I_C=10mA
-
150
-
MHz
Collector output capacitance
* Note 1) hFE Rank : 160~320 only
C_ob
V_CB=10V, I_E=0, f=1MHz
KSD-T7F007-000
-
8
-
pF
1