SUN10A60FD Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – New Generation N-Ch Power MOSFET

SUN10A60FD
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
 Low drain-source On resistance: R_DS(on)=0.6Ω (Typ.)
 Low gate charge: Q_g=33nC (Typ.)
 Low reverse transfer capacitance: C_rss=12.5pF (Typ.)
 Lower EMI noise
 RoHS compliant device
 100% avalanche tested
Ordering Information
Part Number
Marking
Package
GDS
TO-220F-3L
SUN10A60FD
SUN10A60
TO-220F-3L
Marking Information
A_AU_UK _K
◎_S△_UYNΔM10_YDAD_M6□_D0D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) ◎△YMDD□
-. ◎: Option Code
-. △: Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
-. □: Package Option Code
Column 3: Device Code
Absolute maximum ratings (T_C=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Single avalanche energy ^{(Note 2)}
Repetitive avalanche current ^{(Note 1)}
Repetitive avalanche energy ^{(Note 1)}
Power dissipation
Junction temperature
Storage temperature range
V_DSS
V_GSS
I_D
T_c=25C
T_c=100C
I_DM
E_AS
I_AR
E_AR
P_D
T_J
T_stg
* Limited only maximum junction temperature
Rev. date: 09-JUL-14
KSD-T0O159-000
Rating
600
30
10
6.32
40
545
10
4.5
45
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
C
C
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