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SUN10A60F Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – New Generation N-Ch Power MOSFET | |||
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SUN10A60F
New Generation N-Ch Power MOSFET
HIGH SPEED SWITCHING APPLICATION
Features
ï· Low drain-source On resistance: RDS(on)=0.6⦠(Typ.)
ï· Low gate charge: Qg=33nC (Typ.)
ï· Low reverse transfer capacitance: Crss=12.5pF (Typ.)
ï· Lower EMI noise
ï· RoHS compliant device
ï· 100% avalanche tested
Ordering Information
Part Number
Marking
Package
GDS
TO-220F-3L
SUN10A60F
SUN10A60
TO-220F-3L
Marking Information
AAUUK K
âSâ³UYNÎM10YDADM6â¡D0D
SDB20D45
Column 1: Manufacturer
Column 2: Production Information
e.g.) ââ³YMDDâ¡
-. â: Option Code
-. â³: Factory Management Code
-. YMDD: Date Code (Year, Month, Daily)
-. â¡: Package Option Code
Column 3: Device Code
Absolute maximum ratings (TC=25ï°C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Single avalanche energy (Note 2)
Repetitive avalanche current (Note 1)
Repetitive avalanche energy (Note 1)
Power dissipation
Junction temperature
Storage temperature range
VDSS
VGSS
ID
Tc=25ï°C
Tc=100ï°C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rev. date: 20-AUG-14
KSD-T0O158-000
Rating
600
ï±30
10
6.32
40
545
10
3.2
32
150
-55~150
Unit
V
V
A
A
A
mJ
A
mJ
W
ï°C
ï°C
www.auk.co.kr
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