STS8050 Datasheet, PDF (1/5 Pages) AUK corp – NPN Silicon Transistor

STS8050
NPN Silicon Transistor
Descriptions
• High current application
• Radio in class B push-pull operation
Feature
• Complementary pair with STS8550
Ordering Information
Type NO.
STS8050
Marking
STS8050
PIN Connection
C
B
E
B
C
E
TO-92
Package Code
TO-92
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Emitter current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
I_E
P_C
T_J
T_stg
Rating
30
25
6
800
-800
625
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-base breakdown voltage
BV_CBO I_C=500μA, I_E=0
Collector-emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Collector cut-off current
DC current gain
I_CBO
h_FE*
V_CB=15V, I_E=0
V_CE=1V, I_C=50mA
Collector-emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Base-emitter voltage
V_BE
V_CE=1V, I_C=500mA
Transition frequency
f_T
V_CE=5V, I_C=10mA, f=1MHz
Collector output capacitance
C_ob
V_CB=10V, I_E=0
* : h_FE Rank / B : 85~160, C : 120~200, D : 160~300
(Ta=25°C)
Min. Typ. Max. Unit
30
-
-
V
25
-
-
V
-
-
50
nA
85
-
300
-
-
-
0.5
V
-
-
1.2
V
-
120
-
MHz
-
19
-
pF
KSD-T0A025-001
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