STN2907S Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor

STN2907S
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
PIN Connection
Features
• Large collector current: I_C=-600mA
• Low collector saturation voltage:
V_CE(sat)=-0.4V(Max.) @ I_C=-150mA, I_B=-15mA
• Complementary pair with STN2222S
Ordering Information
Type NO.
Marking
STN2907S
GA □
①②
① Device Code ② Year&Week Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
* : Package mounted on 99.5% Alumina 10×8×0.6mm.
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_J
T_stg
B
E
C
SOT-23
Package Code
SOT-23
Rating
-60
-40
-5
-600
350
150
-55~150
(Ta=25°C)
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
h_FE
V_CE(sat)
f_T
C_ob
Test Condition
I_C=-10μA, I_E=0
I_C=-1mA, I_B=0
I_E=-10μA, I_C=0
V_CB=-60V, I_E=0
V_CE=-10V, I_C=-10mA
I_C=-150mA, I_B=-15mA
V_CE=-20V, I_C=-20mA
V_CB=-10V, I_E=0, f=1MHz
(Ta=25°C)
Min. Typ. Max. Unit
-60
-
-
V
-40
-
-
V
-5
-
-
V
-
-
-10
nA
75
-
-
-
-
-
-0.4
V
250
-
-
MHz
-
6.0
-
pF
KSD-T5C080-000
1