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STN2907AS Datasheet, PDF (1/4 Pages) AUK corp – PNP Silicon Transistor
STN2907AS
PNP Silicon Transistor
Descriptions
• General purpose application
• Switching application
PIN Connection
Features
• Large collector current
• Low collector saturation voltage
• Complementary pair with STN2222AS
B
E
C
SOT-23
Ordering Information
Type NO.
STN2907AS
Marking
WA □
①②
① Device Code ② Year&Week Code
Package Code
SOT-23
Absolute maximum ratings
Characteristic
Symbol
Ratings
(Ta=25°C)
Unit
Collector-Base voltage
VCBO
-60
V
Collector-Emitter voltage
VCEO
-50
V
Emitter-Base voltage
VEBO
-5
V
Collector current
Collector dissipation
Junction temperature
IC
-600
mA
PC*
350
mW
Tj
150
°C
Storage temperature
* : Package mounted on 99.5% Alumina 10×8×0.1mm.
Electrical Characteristics
Characteristic
Symbol
Tstg
-55~150
°C
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BVCBO IC=-10μA, IE=0
-60
-
-
V
Collector-Emitter breakdown voltage BVCEO IC=-10mA, IB=0
-50
-
-
V
Emitter-Base breakdown voltage
BVEBO IE=-10μA, IC=0
-5
-
-
V
Collector cut-off current
ICBO
VCB=-60V, IE=0
-
-
-10
nA
DC current gain
hFE
VCE=-10V, IC=-10mA
75
-
-
-
Collector-Emitter saturation voltage VCE(sat) IC=-150mA, IB=-15mA
-
-
-0.4
V
Transition frequency
fT
VCE=-20V, IC=-20mA
250
-
-
MHz
Collector output capacitance
Cob
VCB=-10V, IE=0, f=1MHz
-
6.0
-
pF
KSD-T5C035-000
1