STK830D Datasheet, PDF (1/8 Pages) KODENSHI KOREA CORP. – Advanced N-Ch Power MOSFET

Semiconductor
SWITCHING REGULATOR APPLICATIONS
STK830D
Advanced N-Ch Power MOSFET
Features
• High Voltage: BV_DSS=500V(Min.)
• Low C_rss : C_rss=10pF(Typ.)
• Low gate charge : Qg=17nC(Typ.)
• Low R_DS(on) :R_DS(on)=1.5Ω(Max.)
PIN Connection
D
D
G
Ordering Information
Type No.
Marking
STK830D
STK830
Package Code
TO-252
GDS
S
TO-252
Absolute maximum ratings
Characteristic
Drain-source voltage
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Drain power dissipation
Avalanche current (Single)
②
Single pulsed avalanche energy ②
Avalanche current (Repetitive) ①
Repetitive avalanche energy
①
Junction temperature
Storage temperature range
* Limited by maximum junction temperature
Symbol
V_DSS
V_GSS
I_D
T_C=25℃
T_C=100℃
I_DM
P_D
I_AS
E_AS
I_AR
E_AR
T_J
T_stg
Rating
500
±30
4.5
3.58
18
48
4.5
250
4.5
5.0
150
-55~150
Characteristic
Thermal
resistance
Junction-case
Junction-ambient
Symbol
R_th(J-C)
R_th(J-A)
Typ.
-
-
Max
2.6
62.5
(Tc=25°C)
Unit
V
V
A
A
A
W
A
mJ
A
mJ
°C
°C
Unit
℃/W
KSD-T6O005-003
1