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STK003SF Datasheet, PDF (1/8 Pages) AUK corp – N-channel Trench MOSFET
STK003SF
Advanced N-Ch Trench MOSFET
PORTABLE EQUIPMENT APPLICATION
Features
 Low Voltage : BVDSS=30V(Min.)
 Low VGS(th) : VGS(th)=0.6~1.2V
 Small footprint due to small package
 Low RDS(on) : RDS(on)=40mΩ(Max.)
PIN Connection
D
D
Ordering Information
G
G
Type No.
Marking
Package Code
S
STK003SF
K03 □
①②
SOT-23F
S
SOT-23F
Marking Diagram
K03 □
K03 : Specific Device Code
□ : year & week Code Marking
Absolute maximum ratings (TA=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
Gate-source voltage
Drain current (DC) *
Drain current (Pulsed) *
Power dissipation **
Avalanche current (Single)
②
Single pulsed avalanche energy
②
Avalanche current (Repetitive)
①
Repetitive avalanche energy
①
Junction temperature
Storage temperature range
VDSS
VGSS
ID
IDM
PD
IAS
EAS
IAR
EAR
TJ
Tstg
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
Rating
30
12
3.6
14.4
0.35
3.6
14
4.3
1.3
150
-55~150
Characteristic
Thermal
resistance
Junction-ambient
Symbol
Rth(J-A)
KSD-T5C043-002
Typ.
-
Max.
357
Unit
V
V
A
A
W
A
mJ
A
mJ
C
Unit
C/W
1