STJ009 Datasheet, PDF (1/8 Pages) AUK corp – P-channel Trench MOSFET

STJ009
P-ch Trench MOSFET
Portable Equipment Application
Features
 Low drain-source On-resistance:
R_DS(on)=72mΩ (Max.) @V_GS=-10V, I_D=-2.7A
 Low gate charge: Q_g=4.7nC (Typ.)
 High power and current handing capability
 RoHS compliant device
Ordering Information
Part Number
Marking Code
Package
SOP-8
Packaging
STJ009
STJ009
SOP-8
Tape & Reel
Marking and Pin Assignment
STJ009
YWW
Column 1: Device Code
Column 2: Production Information
- YWW: Year & Week Code
Absolute Maximum Ratings (T_amb=25℃, Unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
V_DSS
Gate-source voltage
V_GSS
Drain current (DC) ¹⁾
I_D
Drain current (Pulsed) ¹⁾
I_DP
Power dissipation
P_D
Single avalanche current ⁴⁾
I_AS
Single avalanche energy ⁴⁾
E_AS
Repetitive avalanche current ³⁾
I_AR
Repetitive avalanche energy ³⁾
E_AR
Operating junction temperature
T_j
Storage temperature range
T_stg
Note 1) Limited by maximum junction temperature
Rev. date: 14-JUN-13
KSD-T7F003-002
Ratings
Unit
-30
V
16
V
-5.3
A
-21.2
A
2
W
-5.3
A
33
mJ
-5.3
A
1.6
mJ
150
C
-55 ~ 150
C
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