STJ001SF Datasheet, PDF (1/8 Pages) AUK corp – P-channel Trench MOSFET

STJ001SF
Advanced P-Ch Trench MOSFET
PORTABLE EQUIPMENT APPLICATION
Features
 Low Voltage : BV_DSS=-20V(Min.)
 Low V_GS(th) : V_GS(th)=-0.6~-1.4V
 Small footprint due to small package
 Low R_DS(on) : R_DS(on)=88mΩ(Max.)
Ordering Information
PIN Connection
D
D
G
G
Type No.
Marking
Package Code
S
STJ001SF
J01 □
①②
SOT-23F
S
SOT-23F
Marking Diagram
J01 □
J01 : Specific Device Code
□ : Year & Week Code Marking
Absolute maximum ratings (T_A=25C unless otherwise noted)
Characteristic
Symbol
Drain-source voltage
V_DSS
Gate-source voltage
Drain current (DC) ^*
Drain current (Pulsed) ^*
Power dissipation ^**
Avalanche current (Single)
②
Single pulsed avalanche energy
②
Avalanche current (Repetitive)
①
Repetitive avalanche energy
①
Junction temperature
Storage temperature range
V_GSS
I_D
I_DM
P_D
I_AS
E_AS
I_AR
E_AR
T_J
T_stg
* Limited by maximum junction temperature
** Device mounted on a glass-epoxy board
Rating
-20
12
-2.3
-9.2
0.35
-2.3
28
-2.3
1.3
150
-55~150
Characteristic
Thermal
resistance
Junction-ambient
Symbol
R_th(J-A)
KSD-T5C037-003
Typ.
-
Max.
357
Unit
V
V
A
A
W
A
mJ
A
mJ
C
Unit
C/W
1