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| STD882D Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor | |||
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STD882D
NPN Silicon Transistor
Description
⢠Suitable for low voltage large current drivers
⢠Excellent hFE Linearity
⢠Complementary pair with STB772D
⢠Switching Application
Features
⢠Low collector saturation voltage
VCE(sat)=0.4V(Max.)
Ordering Information
Type NO.
STD882D
Marking
STD882
PIN Connection
TO-252
Package Code
TO-252
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector Power dissipation (Tc=25â)
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ã²
Symbol
VCBO
VCEO
VEBO
IC
ICP *
PC
Tj
Tstg
Ratings
40
15
7
5
10
15
150
-55~150
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
* HFE rank :160~320 Only
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
hFE1
hFE2
VCE(sat)
fT
Cob
Test Condition
IC=50μA, IE=0
IC=1mA, IB=0
IE=50μA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
VCE=2V, IC=0.5A
VCE=2V, IC=2A
IC=3A, IB=100mA
VCE=6V, IE=-50mA
VCB=20V, IE=0, f=1MHz
KSD-T6O020-001
(Ta=25°C)
Min. Typ. Max. Unit
40
-
-
V
15
-
-
V
7
-
-
V
-
-
0.1
μA
-
-
0.1
μA
160
-
320
-
100
-
-
-
-
-
0.4
V
-
150
-
MHz
-
-
50
pF
1
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