STD6528EF Datasheet, PDF (1/5 Pages) AUK corp – NPN Silicon Transistor

STD6528EF
NPN Silicon Transistor
Application
• Micom Direct drive and switching Application
PIN Connection
Features
• Very low saturation voltage: V_CE(sat)=0.2V (Max.)
@ I_C=50mA, I_B=5mA
• High DC current gain: h_FE=1000~2500
• Small size SMD package
3
1
2
Ordering Information
Type NO.
STD6528EF
Marking
ZB □
①②
①Device Code ② Year&Week Code
SOT-523F
Package Code
SOT-523F
Absolute Maximum Ratings
Characteristic
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_J
T_stg
Rating
25
20
5
150
150
150
-55~150
Ta=25°C
Unit
V
V
V
mA
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
Collector cut-off current
I_CBO
V_CB=25V, I_E=0
Emitter cut-off current
I_EBO
V_EB=5V, I_C=0
DC current gain
Collector-emitter saturation voltage
h_FE
V_CE(sat)
V_CE=2V, I_C=4mA
I_C=100 ㎂, I_B=10 ㎂
I_C=50mA, I_B=5mA
Base-emitter voltage
V_BE
V_CE=2V, I_C=4mA
Transition frequency
f_T
V_CE=10V, I_C=1mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
Ta=25°C
Min. Typ. Max. Unit
20
-
-
V
-
-
0.1
μA
-
-
0.1
μA
1000 -
2500
-
-
0.03
-
V
-
-
0.2
-
0.6
-
V
-
150
-
MHz
-
1.5
-
pF
KSD-T5E003-001
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