STD361 Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

Description
• Extremely low collector-to-emitter
saturation voltage
( V_CE(SAT)=0.2V Typ. @I_C/I_B=3A/150 ㎃)
• Suitable for low voltage large current
drivers
• Switching Application
STD361
NPN Silicon Transistor
PIN Connection
Ordering Information
SOT-89
Type NO.
Marking
Package Code
STD361
YA
YWW
YA: DEVICE CODE, YWW(Y : Year code, WW : Weekly code)
SOT-89
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
Collector-Emitter voltage
V_CBO
40
V_CEO
15
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : When mounted on ceramic substrate(250 ㎟×0.8t)
V_EBO
I_C
P_C
P_C*
T_J
T_stg
7
5
0.5
1
150
-55~150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BV_CBO I_C=50 ㎂, I_E=0
40
Collector-Emitter breakdown voltage BV_CEO I_C=1 ㎃, I_B=0
15
Emitter-Base breakdown voltage
BV_EBO I_E=50 ㎂, I_C=0
7
Collector cut-off current
I_CBO
V_CB=30V, I_E=0
-
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
I_EBO
h_FE1
h_FE2
V_CE(sat)
f_T
C_ob
V_EB=5V, I_C=0
V_CE=2V, I_C=500 ㎃
V_CE=2V, I_C=3A
I_C=3A, I_B=150 ㎃
V_CE=6V, I_E=-50 ㎃
V_CB=20V, I_E=0, f=1 ㎒
-
160
40
-
-
-
Typ.
-
-
-
-
-
-
-
-
150
-
(Ta=25°C)
Unit
V
V
V
A
W
°C
°C
(Ta=25°C)
Max. Unit
-
V
-
V
-
V
0.1
㎂
0.1
㎂
320
-
-
-
0.3
V
-
㎒
50
㎊
KSD-T5B011-001
1