STD123U Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

STD123U
NPN Silicon Transistor
Features
• Low saturation medium current application
• Extremely low collector saturation voltage
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Low on resistance : R_ON=0.6Ω(Max.) (I_B=1mA)
PIN Connection
3
1
2
Ordering Information
Type NO.
STD123U
Marking
123 □
①②
①Device Code ② Year&Week Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C
T_j
T_stg
SOT-323
Package Code
SOT-323
Ratings
20
15
6.5
1
200
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
Collector-Emitter
voltage
breakdown
Emitter-Base breakdown voltage
BV_CBO
BV_CEO
BV_EBO
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=20V, I_E=0
Emitter cut-off current
I_EBO
V_EB=6V, I_C=0
DC current gain
h_FE
V_CE=1V, I_C=100mA
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Transistor frequency
f_T
V_CE=5V, I_C=50mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
On resistance
R_ON
f=1KHz, I_B=1mA, V_IN=0.3V
Min.
20
15
6.5
-
-
150
-
-
-
-
(Ta=25°C)
Typ. Max. Unit
-
-
V
-
-
V
-
-
V
-
0.1
μA
-
0.1
μA
-
-
-
0.1 0.3
V
260
-
MHz
5
-
pF
0.6
-
Ω
KSD-T5D033-000
1