STD123S Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

STD123S
NPN Silicon Transistor
Features
• Low saturation medium current application
• Extremely low collector saturation voltage
• Suitable for low voltage large current drivers
• High DC current gain and large current capability
• Low on resistance : R_ON=0.6Ω(Max.) (I_B=1mA)
PIN Connection
Ordering Information
Type No.
Marking
STD123S
123 □
①②
①Device Code ② Year&Week Code
Package Code
SOT-23
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* : Package mounted on 99.5% alumina 10×8×0.1mm
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
B
E
C
SOT-23
Ratings
20
15
6.5
1
350
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Collector-Base breakdown voltage
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-Emitter saturation voltage
Transistor frequency
Collector output capacitance
On resistance
Symbol
BV_CBO
BV_CEO
BV_EBO
I_CBO
I_EBO
h_FE
V_CE(sat)
f_T
C_ob
R_ON
Test Condition
I_C=50μA, I_E=0
I_C=1mA, I_B=0
I_E=50μA, I_C=0
V_CB=20V, I_E=0
V_EB=6V, I_C=0
V_CE=1V, I_C=100mA
I_C=500mA, I_B=50mA
V_CE=5V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
f=1KHz, I_B=1mA, V_IN=0.3V
(Ta=25°C)
Min. Typ. Max. Unit
20
-
-
V
15
-
-
V
6.5
-
-
V
-
-
0.1
μA
-
-
0.1
μA
150
-
-
-
-
0.1 0.3
V
-
260
-
MHz
-
5
-
pF
-
0.6
-
Ω
KSD-T5C034-001
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