STD123ASF Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

STD123ASF
NPN Silicon Transistor
Features
• High β& low saturation transistor.
h_FE=400 Min. @V_CE=1V, Ic=100mA
• Suitable for large current drive directly.
• Application for IRED Drive transistor in remote
transmitter.
PIN Connection
3
1
Ordering Information
Type NO.
STD123ASF
Marking
12A □
①②
① Device Code ② Year&Week Code
2
SOT-23F
Package Code
SOT-23F
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector dissipation
Junction temperature
Storage temperature
* : Package mounted on 99.5% alumina 10×8×0.1mm
Electrical Characteristics
Characteristic
Symbol
Symbol
V_CBO
V_CEO
V_EBO
I_C
P_C*
T_j
T_stg
Ratings
10
6
3
1
350
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Test Condition
(Ta=25°C)
Min. Typ. Max. Unit
Collector-Base breakdown voltage
BV_CBO I_C=50μA, I_E=0
10
-
-
V
Collector-Emitter breakdown voltage BV_CEO I_C=1mA, I_B=0
6
-
-
V
Emitter-Base breakdown voltage
BV_EBO I_E=50μA, I_C=0
3
-
-
V
Collector cut-off current
I_CBO
V_CB=10V, I_E=0
-
-
0.1
μA
Emitter cut-off current
I_EBO
V_EB=3V, I_C=0
-
-
0.1
μA
DC current gain
h_FE
V_CE=1V, I_C=100mA
400
-
-
-
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
-
0.1 0.3
V
Transistor frequency
f_T
V_CE=5V, I_C=50mA
-
260
-
MHz
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
-
5
-
pF
On resistance
R_ON
f=1KHz, I_B=1mA, V_IN=0.3V
-
0.6
-
Ω
KSD-T5C077-000
1