STD123AS Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor

Features
• High β& low saturation transistor.
• h_FE=400 Min. @V_CE=1V, Ic=100mA
• Suitable for large current drive directly.
• Application for IRED Drive transistor in
remote transmitter.
STD123AS
NPN Silicon Transistor
PIN Connection
Ordering Information
Type NO.
STD123AS
Marking
12A □
①②
①Device Code ②Year&Week Code
Absolute maximum ratings
Characteristic
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : Package mounted on 99.5% alumina 10×8×0.1mm
Symbol
V_CBO
V_CEO
V_EBO
I_C
*_PC
T_j
T_stg
SOT-23
Package Code
SOT-23
Ratings
10
6
3
1
350
150
-55~150
(Ta=25°C)
Unit
V
V
V
A
mW
°C
°C
Electrical Characteristics
Characteristic
Symbol
Test Condition
Collector-Base breakdown voltage
BV_CBO I_C=50μA, I_E=0
Collector-Emitter breakdown voltage
Emitter-Base breakdown voltage
BV_CEO
BV_EBO
I_C=1mA, I_B=0
I_E=50μA, I_C=0
Collector cut-off current
I_CBO
V_CB=10V, I_E=0
Emitter cut-off current
I_EBO
V_EB=3V, I_C=0
DC current gain
h_FE
V_CE=1V, I_C=100mA
Collector-Emitter saturation voltage V_CE(sat) I_C=500mA, I_B=50mA
Transition frequency
f_T
V_CE=5V, I_C=50mA
Collector output capacitance
C_ob
V_CB=10V, I_E=0, f=1MHz
On resistance
R_ON
f=1KHz, I_B=1mA, V_IN=0.3V
(Ta=25°C)
Min. Typ. Max. Unit
10
-
-
V
6
-
-
V
3
-
-
V
-
-
0.1
μA
-
-
0.1
μA
400
-
-
-
-
0.1 0.3
V
-
260
-
MHz
-
5
-
pF
-
0.6
-
Ω
KSD-T5C016-002
1