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| STC722D Datasheet, PDF (1/4 Pages) AUK corp – NPN Silicon Transistor | |||
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STC722D
NPN Silicon Transistor
Description
⢠General purpose amplifier
⢠Surface mount applications
Features
⢠PC(Collector dissipation)=15W
⢠Low speed switching applications
⢠Complementary pair with STA723D
Ordering Information
Type NO.
STC722D
Marking
STC722
PIN Connection
TO-252
Package Code
TO-252
Absolute maximum ratings
Characteristic
Symbol
Ratings
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
VCBO
40
VCEO
30
VEBO
5
IC
Collector current
ICP
Collector Power dissipation (Tc=25â)
PC
Junction temperature
Tj
Storage temperature
Tstg
* : Single pulse, tp= 300 ã²
3
6
15
150
-55~150
Electrical Characteristics
Characteristic
Symbol
Test Condition
Min.
Collector-Base breakdown voltage
BVCBO
IC=50μA, IE=0
40
Collector-Emitter breakdown voltage
BVCEO
IC=1mA, IB=0
30
Emitter-Base breakdown voltage
BVEBO
IC=50μA, IC=0
5
Collector cut-off current
ICBO
VCB=20V, IE=0
-
Emitter cut-off current
IEBO
VEB=4V, IC=0
-
DC current gain
hFE
VCE=3V, IC=500mA
80
VCE=3V, IC=3A
10
Collector-Emitter saturation voltage
VCE(sat)
VCE=2A, IC= 200mA
-
Transition frequency
fT
VCE=5V, IC=500mA,
f=1MHz
-
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
* : hFE rank / O : 80~218, Y : 120~270, G : 180~390
(Ta=25°C)
Unit
V
V
V
A(DC)
A(Pulse)
W
°C
°C
(Ta=25°C)
Typ. Max. Unit
-
-
V
-
-
V
-
-
V
-
1
μA
-
1
μA
-
390
-
-
-
0.5 0.8
V
120
-
MHz
13
-
pF
KSD-T6O019-001
1
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