STC6075Q Datasheet, PDF (1/6 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

STC6075Q
NPN Silicon Transistor
Descriptions
• General purpose amplifier
• High voltage application
PIN Connection
Features
• High collector breakdown voltage
: V_CEO = 90V
• Low collector saturation voltage
: V_CE(sat)=0.5V(MAX.)
Ordering Information
Type No.
Marking
STC6075Q
STC6075□
□ : Year & Week Code
Package Code
SOT-223
SOT-223
Absolute maximum ratings
Characteristic
Symbol
Ratings
(Ta=25°C)
Unit
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
* : Single pulse, tp= 300 ㎲
** : When mounted on ceramic substrate(250 ㎟×0.8t)
V_CBO
V_CEO
V_EBO
I_C
I_CP*
P_C
P_C^**
T_J
T_stg
120
90
6
1.5
3.0
1.1
1.5
150
-55~150
V
V
V
A(DC)
A(Pulse)
W
°C
°C
KSD-T5A006-000
1