STC503F Datasheet, PDF (1/5 Pages) KODENSHI KOREA CORP. – NPN Silicon Transistor

STC503F
NPN Silicon Transistor
Applications
• Power amplifier application
• High current switching application
PIN Connection
Features
• Power Transistor General Purpose application
• Low saturation voltage
: V_CE(sat)=0.4V Typ.
• High Voltage : V_CEO=65V Min.
Ordering Information
Type NO.
Marking
STC503F
Absolute Maximum Ratings
C503
YWW
Characteristic
Symbol
Collector-Base voltage
V_CBO
Collector-Emitter voltage
V_CEO
Emitter-base voltage
V_EBO
Collector current
I_C
I_CP*
Collector Power dissipation
Junction temperature
P_C
P_C^**
T_j
Storage temperature
T_stg
* : Single pulse, tp= 300 ㎲
** : When mounted on ceramic substrate(250 ㎟×0.8t)
SOT-89
Package Code
Rating
80
65
5
3
6
0.5
1
150
-55~150
SOT-89
[Ta=25℃]
Unit
V
V
V
A(DC)
A(Pulse)
W
W
°C
°C
Electrical Characteristics
Characteristic
Collector-Emitter breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Base-Emitter on voltage
Collector-Emitter saturation voltage
Transition frequency
Collector output capacitance
* hFE rank : 300~500 Only
Symbol
BV_CEO
I_CBO
I_EBO
h_FE *
V_BE(ON)
V_CE(sat)
f_T
C_ob
Test Condition
I_C=1mA, I_B=0
V_CB=65V, I_E=0
V_EB=5V, I_C=0
V_CE=5V, I_C=0.5A
V_CE=5V, I_C=0.5A
I_C=2A, I_B=0.2A
V_CB=5V, I_C=50mA
V_CB=10V, I_E=0, f=1MHz
KSD-T5B024-000
Min.
65
-
-
300
-
-
-
-
Typ.
-
-
-
-
0.7
0.4
250
15
(Ta=25°C)
Max. Unit
-
V
50
μA
50
μA
500
-
1
V
1
V
-
MHz
-
pF
1